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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV20
VHF power transistor
Product specification
August 1986
Philips Semiconductors
VHF power transistor
Product specification
BLV20
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated h.f. and v.h.f.
transmitters with a nominal supply
voltage of 28 V. The transistor is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
PINNING - SOT123
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C in an unneutralized common-emitter
class-B circuit
MODE OF
OPERATION
c.w.
VCE f
V MHz
28 175
PL
W
8
Gp
dB
> 12
η
%
> 65
zi
Ω
1,8 + j0,7
YL
mS
18 − j20
PIN CONFIGURATION
halfpage
1
2
4
handbook, halfpage
3
MSB057
b
MBB012
c
e
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of
which is toxic. The device is entirely safe provided that the BeO disc is
not damaged.
August 1986
2
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