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Número de pieza | BLV100 | |
Descripción | UHF power transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BLV100 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! DISCRETE SEMICONDUCTORS
DATA SHEET
BLV100
UHF power transistor
Product specification
March 1993
1 page Philips Semiconductors
UHF power transistor
Product specification
BLV100
APPLICATION INFORMATION
RF performance in a class-AB circuit; Th = 25 °C; Rth mb-h = 0.4 K/W, unless otherwise specified.
MODE OF OPERATION
f
(MHz)
VCE
(V)
ICQ
(mA)
PL
(W)
GP
(dB)
c.w. class-AB
960 24
20 8
>8
typ. 9
ηc
(%)
> 50
typ. 55
12
handbook, halfpage
GP
(dB)
8
MDA545
60
ηC ηC
(%)
Gp 40
15
handbook, halfpage
PL
(W)
10
MDA539
4 20 5
00
0 4 8 12
PL (W)
Fig.6 Gain and efficiency as functions of load
power, typical values.
0
01 2 3
PS (W)
Fig.7 Load power as a function of drive power,
typical values.
Ruggedness in class-AB operation
The BLV100 is capable of withstanding a load mismatch
corresponding to VSWR = 10:1 through all phases, under
the following conditions:
VCE = 24 V, f = 960 MHz, and rated output power.
March 1993
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet BLV100.PDF ] |
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