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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLT53
UHF power transistor
Product specification
May 1991
Philips Semiconductors
UHF power transistor
Product specification
BLT53
FEATURES
• Emitter-ballasting resistors for an
optimum temperature profile
• Gold metallization ensures
excellent reliability
• Withstands full load mismatch.
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a 4-lead SOT122D
studless envelope with a ceramic cap.
It is designed for common emitter,
class-B operation in portable radio
transmitters in the 470 MHz
communications band. All leads are
isolated from the mounting flange.
PINNING - SOT122D
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C in a common emitter test circuit.
MODE OF
OPERATION
f VCE PL Gp
(MHz) (V) (W) (dB)
c.w. class-B
470 7.5 8 > 6
ηc
(%)
> 60
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
PIN CONFIGURATION
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
halfpage
1
4
3
handbook, halfpage
c
b
MBB012
e
2
MSB055
Fig.1 Simplified outline and symbol.
May 1991
2
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