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BLS3135-20 반도체 회로 부품 판매점

Microwave power transistor



NXP Semiconductors 로고
NXP Semiconductors
BLS3135-20 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
M3D259
BLS3135-20
Microwave power transistor
Product specification
2000 Feb 01


BLS3135-20 데이터시트, 핀배열, 회로
Philips Semiconductors
Microwave power transistor
Product specification
BLS3135-20
FEATURES
Suitable for short and medium pulse applications
Internal input and output matching networks for an easy
circuit design
Emitter ballasting resistors improve ruggedness
Gold metallization ensures excellent reliability
Interdigitated emitter-base structure provides high
emitter efficiency
Multicell geometry improves power sharing and reduces
thermal resistance.
APPLICATIONS
Common base class-C pulsed power amplifiers for radar
applications in the 3.1 to 3.5 GHz range.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT422A) with the common base connected to the
flange.
PINNING - SOT422A
PIN DESCRIPTION
1 collector
2 emitter
3 base; connected to flange
handbook, halfpage
3
1
3
2 MBK051
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common base class-C test circuit.
MODE OF OPERATION
f
(GHz)
VCB
(V)
Pulsed, class-C
3.1 to 3.5
40
PL
(W)
20
Gp
(dB)
typ. 8
ηC
(%)
typ. 40
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
2000 Feb 01
2




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