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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D392
BLF647
UHF power LDMOS transistor
Product specification
Supersedes data of 2001 Aug 02
2001 Nov 27
Philips Semiconductors
UHF power LDMOS transistor
Product specification
BLF647
FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Source on underside eliminates DC isolators, reducing
common mode inductance
• Designed for broadband operation (HF to 800 MHz)
• Internal input damping for excellent stability over the
whole frequency range.
APPLICATIONS
• Communication transmitter applications in the
HF to 800 MHz frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
push-pull transistor in a SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.
PINNING - SOT540A
PIN DESCRIPTION
1 drain 1
2 drain 2
3 gate 1
4 gate 2
5 source, connected to flange
12
3
Top view
5
4
MBK777
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF
OPERATION
f
(MHz)
VDS
PL
Gp
ηD dim
(V) (W) (dB) (%) (dBc)
CW, class-AB
600
28 120 >14.5 >55
−
2-tone,
class-AB
f1 = 600; f2 = 600.1
28
120 (PEP)
>14.5
>40
≤−26
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VDS
VGS
ID
Ptot
Tstg
Tj
PARAMETER
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
Tmb ≤ 25 °C
MIN.
−
−
−
−
−65
−
MAX.
65
±15
18
290
+150
200
UNIT
V
V
A
W
°C
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2001 Nov 27
2
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