BLF544 반도체 회로 부품 판매점
UHF power MOS transistor
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 NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D076
BLF544
UHF power MOS transistor
Product specification
Supersedes data of October 1992
1998 Jan 21
Philips Semiconductors
UHF power MOS transistor
Product specification
BLF544
FEATURES
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures excellent reliability
• Designed for broadband operation.
APPLICATIONS
• Communication transmitters in the UHF frequency
range.
DESCRIPTION
N-channel enhancement mode vertical D-MOS power
transistor encapsulated in a 6-lead, SOT171A flange
package with a ceramic cap. All leads are isolated from the
flange.
A marking code showing gate-source voltage (VGS)
information is provided for matched pair applications.
PINNING - SOT171A
PIN SYMBOL
1s
2s
3g
4d
5s
6s
DESCRIPTION
source
source
gate
drain
source
source
handbook, halfpage 2 4 6
135
Top view
d
gs
MAM390
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source class-B circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
CW, class-B
CW, class-B
500 28
960 28
PL Gp ηD
(W) (dB) (%)
20 >11 >50
20
typ. 7
typ. 50
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1998 Jan 21
2
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BLF544 transistor
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