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PDF BLF248 Data sheet ( Hoja de datos )

Número de pieza BLF248
Descripción VHF push-pull power MOS transistor
Fabricantes NXP Semiconductors 
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No Preview Available ! BLF248 Hoja de datos, Descripción, Manual

DISCRETE SEMICONDUCTORS
DATA SHEET
BLF248
VHF push-pull power MOS
transistor
Product specification
September 1992

1 page




BLF248 pdf
Philips Semiconductors
VHF push-pull power MOS transistor
Product specification
BLF248
200
handbook, halfpage
RDS(on)
(m)
100
MGP206
0
0 50
ID = 8 A; VGS = 10 V.
100 150
Tj (°C)
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values per section.
1500
handbook, halfpage
C
(pF)
1000
MGP207
Cis
500
Cos
0
0 10 20 30 40
VDS (V)
VGS = 0; f = 1 MHz.
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values per
section.
handboo6k,0h0alfpage
Crs
(pF)
400
MGP208
200
0
0 10 20 30 40
VDS (V)
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values per
section.
September 1992
5

5 Page





BLF248 arduino
Philips Semiconductors
VHF push-pull power MOS transistor
Product specification
BLF248
5
handbook, halfpage
Zi
()
0
5
ri
xi
MGP218
10
15
20
0
50 100 150 200 250
f (MHz)
Class-AB operation; VDS = 28 V; ID = 2 × 250 mA;
RGS = 536 (per section);
PL = 300 W (total device); Th = 25 °C.
Fig.13 Input impedance as a function of frequency
(series components), typical values per
section.
3
handbook, halfpage
ZL
()
2
1
0
RL
XL
MGP217
1
0 50 100 150 200 250
f (MHz)
Class-AB operation; VDS = 28 V; ID = 2 × 250 mA;
RGS = 536 (per section);
PL = 300 W (total device); Th = 25 °C.
Fig.14 Load impedance as a function of frequency
(series components), typical values per
section.
40
handbook, halfpage
Gp
(dB)
30
MGP216
20
10
0
0 50 100 150 200 250
f (MHz)
Class-AB operation; VDS = 28 V; ID = 2 × 250 mA;
RGS = 536 (per section);
PL = 300 W (total device); Th = 25 °C.
Fig.15 Power gain as a function of frequency,
typical values per section.
September 1992
11

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