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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF246
VHF power MOS transistor
Product specification
Supersedes data of September 1992
1996 Oct 21
Philips Semiconductors
VHF power MOS transistor
Product specification
BLF246
FEATURES
• High power gain
• Low noise figure
• Easy power control
• Good thermal stability
• Withstands full load mismatch.
PINNING - SOT121
PIN SYMBOL
1d
2s
3g
4s
DESCRIPTION
drain
source
gate
source
APPLICATIONS
• Large signal amplifier applications in the VHF frequency
range.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 4-lead, SOT121 flange
package, with a ceramic cap. All leads are isolated from
the flange. A marking code, showing gate-source voltage
(VGS) information is provided for matched pair
applications. Refer to the General section of Data
Handbook SC19a for further information.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
handbo1ok, halfpage
4
g
2 3 MAM267
Fig.1 Simplified outline and symbol.
d
s
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
CW, class-B
108 28
PL
(W)
80
Gp
(dB)
≥16
ηD
(%)
≥55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Oct 21
2
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