파트넘버.co.kr BLF242 데이터시트 PDF


BLF242 반도체 회로 부품 판매점

HF/VHF power MOS transistor



NXP Semiconductors 로고
NXP Semiconductors
BLF242 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF242
HF/VHF power MOS transistor
Product specification
September 1992


BLF242 데이터시트, 핀배열, 회로
Philips Semiconductors
HF/VHF power MOS transistor
Product specification
BLF242
FEATURES
High power gain
Low noise
Easy power control
Good thermal stability
Withstands full load mismatch
Gold metallization ensures
excellent reliability.
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for professional transmitter
applications in the HF/VHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT123 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
PINNING - SOT123
PIN DESCRIPTION
1 drain
2 source
3 gate
4 source
PIN CONFIGURATION
halfpage
1
4
d
g
MBB072 s
23
MSB057
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
CW, class-B
175 28
PL Gp
(W) (dB)
ηD
(%)
5 > 13 > 50
typ. 16
typ. 60
September 1992
2




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BLF242 transistor

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