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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D379
BLF2047
UHF power LDMOS transistor
Product specification
Supersedes data of 1999 Jul 01
1999 Dec 02
Philips Semiconductors
UHF power LDMOS transistor
Product specification
BLF2047
FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Source on underside eliminates DC isolators, reducing
common mode inductance
• Designed for broadband operation (1.8 to 2.2 GHz).
• Internal input and output matching for high gain and
efficiency
PINNING
PIN
1
2
3
handbook, halfpage
DESCRIPTION
drain
gate
source connected to flange
1
APPLICATIONS
• Common source class-AB operation for PCN and PCS
applications in the 1800 to 2200 MHz frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange SOT502A
package with a ceramic cap. The common source is
connected to the mounting flange.
Top view
2
3
MBK394
Fig.1 Simplified outline SOT502A.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
Two-tone, class-AB
f1 = 2200; f2 = 2200.1
26
28
PL
(W)
65 (PEP)
65 (PEP)
Gp
(dB)
>10
typ. 12.6
ηD
(%)
>30
typ. 31
dim
(dBc)
≤−25
typ. −29
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Dec 02
2
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