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BLF2047 반도체 회로 부품 판매점

UHF power LDMOS transistor



NXP Semiconductors 로고
NXP Semiconductors
BLF2047 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D379
BLF2047
UHF power LDMOS transistor
Product specification
Supersedes data of 1999 Jul 01
1999 Dec 02


BLF2047 데이터시트, 핀배열, 회로
Philips Semiconductors
UHF power LDMOS transistor
Product specification
BLF2047
FEATURES
High power gain
Easy power control
Excellent ruggedness
Source on underside eliminates DC isolators, reducing
common mode inductance
Designed for broadband operation (1.8 to 2.2 GHz).
Internal input and output matching for high gain and
efficiency
PINNING
PIN
1
2
3
handbook, halfpage
DESCRIPTION
drain
gate
source connected to flange
1
APPLICATIONS
Common source class-AB operation for PCN and PCS
applications in the 1800 to 2200 MHz frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange SOT502A
package with a ceramic cap. The common source is
connected to the mounting flange.
Top view
2
3
MBK394
Fig.1 Simplified outline SOT502A.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
Two-tone, class-AB
f1 = 2200; f2 = 2200.1
26
28
PL
(W)
65 (PEP)
65 (PEP)
Gp
(dB)
>10
typ. 12.6
ηD
(%)
>30
typ. 31
dim
(dBc)
≤−25
typ. 29
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Dec 02
2




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