|
NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D175
BLF202
HF/VHF power MOS transistor
Product specification
1999 Oct 20
Philips Semiconductors
HF/VHF power MOS transistor
Product specification
BLF202
FEATURES
• High power gain
• Easy power control
• Gold metallization
• Good thermal stability
• Withstands full load mismatch.
PINNING - SOT409A
PIN DESCRIPTION
1, 8 source
2, 3 gate
4, 5 source
6, 7 drain
APPLICATIONS
• Communications transmitters in the HF/VHF range with
a nominal supply voltage of 12.5 V.
handbook, halfpage
8
5
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor in an 8-lead SOT409A SMD package with a
ceramic cap.
1
Top view
4
MBK150
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
CW, class-B
175 12.5
PL
(W)
2
Gp
(dB)
>10
ηD
(%)
>50
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
1999 Oct 20
2
|