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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D390
BLF1047
UHF power LDMOS transistor
Preliminary specification
Supersedes data of 1999 July 01
2000 Feb 02
Philips Semiconductors
UHF power LDMOS transistor
Preliminary specification
BLF1047
FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Source on underside eliminates DC isolators, reducing
common mode inductance
• Designed for broadband operation (HF to 1 GHz).
APPLICATIONS
• Communication transmitter applications in the UHF
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT541A) with a ceramic cap. The common source is
connected to the mounting flange.
PINNING - SOT541A
PIN DESCRIPTION
1 drain
2 gate
3 source, connected to flange
handbook, halfpage
1
Top view
2
3
MBK765
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
CW, class-AB (2-tone)
CW, class-AB (1-tone)
f1 = 960; f2 = 960.1
960
26
26
PL
(W)
70 (PEP)
70
Gp
(dB)
>14
>14
ηD dim
(%) (dBc)
>35 ≤−26
>45 −
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Feb 02
2
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