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BFY50 반도체 회로 부품 판매점

NPN medium power transistors



NXP Semiconductors 로고
NXP Semiconductors
BFY50 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BFY50; BFY51; BFY52
NPN medium power transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 22


BFY50 데이터시트, 핀배열, 회로
Philips Semiconductors
NPN medium power transistors
Product specification
BFY50; BFY51; BFY52
FEATURES
High current (max. 1 A)
Low voltage (max. 35 V).
APPLICATIONS
General purpose industrial applications.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
handbook, halfpag1e
2
3
2
MAM317
3
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
BFY50
BFY51
BFY52
VCEO
collector-emitter voltage
BFY50
BFY51
BFY52
ICM peak collector current
Ptot total power dissipation
hFE DC current gain
BFY50
BFY51
BFY52
fT transition frequency
BFY50
BFY51; BFY52
CONDITIONS
open emitter
open base
Tamb 25 °C
Tcase 100 °C
IC = 150 mA; VCE = 10 V
IC = 50 mA; VCE = 10 V; f = 100 MHz
MIN. TYP. MAX. UNIT
− − 80 V
− − 60 V
− − 40 V
− − 35 V
− − 30 V
− − 20 V
−−1A
− − 800 mW
− − 2.86 W
30 112
40 123
60 142
60 − − MHz
50 − − MHz
1997 Apr 22
2




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