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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BFY50; BFY51; BFY52
NPN medium power transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 22
Philips Semiconductors
NPN medium power transistors
Product specification
BFY50; BFY51; BFY52
FEATURES
• High current (max. 1 A)
• Low voltage (max. 35 V).
APPLICATIONS
• General purpose industrial applications.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
DESCRIPTION
NPN medium power transistor in a TO-39 metal package.
handbook, halfpag1e
2
3
2
MAM317
3
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
BFY50
BFY51
BFY52
VCEO
collector-emitter voltage
BFY50
BFY51
BFY52
ICM peak collector current
Ptot total power dissipation
hFE DC current gain
BFY50
BFY51
BFY52
fT transition frequency
BFY50
BFY51; BFY52
CONDITIONS
open emitter
open base
Tamb ≤ 25 °C
Tcase ≤ 100 °C
IC = 150 mA; VCE = 10 V
IC = 50 mA; VCE = 10 V; f = 100 MHz
MIN. TYP. MAX. UNIT
− − 80 V
− − 60 V
− − 40 V
− − 35 V
− − 30 V
− − 20 V
−−1A
− − 800 mW
− − 2.86 W
30 112 −
40 123 −
60 142 −
60 − − MHz
50 − − MHz
1997 Apr 22
2
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