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BFY450P 반도체 회로 부품 판매점

HiRel NPN Silicon RF Transistor



Infineon Technologies AG 로고
Infineon Technologies AG
BFY450P 데이터시트, 핀배열, 회로
HiRel NPN Silicon RF Transistor
BFY450
HiRel Discrete and Microwave Semiconductor
For Medium Power Amplifiers
Compression Point P-1dB =19dBm 1.8 GHz
Max. Available Gain Gma = 16dB at 1.8 GHz
Hermetically sealed microwave package
Transition Frequency fT = 20 GHz
SIEGET 25-Line
Infineon Technologies Grounded Emitter Transistor-
25 GHz fT-Line
Space Qualified
ESA/SCC Detail Spec. No.: 5611/008
Type Variant No. 03
4
1
3
2
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
BFY450 (ql)
Marking Ordering Code
- see below
Pin Configuration
1 23 4
CEBE
Package
Micro-X
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
(see order instructions for ordering example)
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
Q62702F1663
on request
on request
Q62702F1708
Semiconductor Group
1 of 5
Draft B, September 99


BFY450P 데이터시트, 핀배열, 회로
BFY450
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
TS 110°C 1), 2)
Junction temperature
Operating temperature range
Storage temperature range
Thermal Resistance
Junction-soldering point 2)
Symbol
VCEO
VCBO
VEBO
IC
IB
Ptot
Values
4.5
15
1.5
100
10
450
Tj 175
Top -65...+175
Tstg -65...+175
Rth JS
< 145
Notes.:
1) At TS = + 110 °C. For TS > + 110 °C derating is required.
2) TS is measured on the collector lead at the soldering point to the pcb.
Unit
V
V
V
mA
mA
mW
°C
°C
°C
K/W
Electrical Characteristics
at TA=25°C; unless otherwise specified
Parameter
DC Characteristics
Collector-base cutoff current
VCB = 5 V, IE = 0
Collector-emitter cutoff current 1.)
VCE = 4.5 V, IB = 1.0µA
Emitter-base cuttoff current
VEB = 1.5 V, IC = 0
DC current gain
IC = 20 mA, VCE = 1 V
Notes:
1.) This Test assures V(BR)CE0 > 4.5V
Symbol
min.
Values
typ. max.
Unit
ICBO
-
- 100 nA
ICEX
IEBO
-
-
- 200 µA
(t.b.d.)
- 50 µA
hFE 50 90 150 -
Semiconductor Group
2 of 5
Draft B, September 99




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BFY450P transistor

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