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Infineon Technologies AG |
HiRel NPN Silicon RF Transistor
BFY405
• HiRel Discrete and Microwave Semiconductor
• For Low Current Applications
• For Oscillators up to 12 GHz
• Noise Figure F = 1.15 dB at 1.8 GHz
Outstanding Gms = 23dB at 1.8 GHz
• Hermetically sealed microwave package
• Transition Frequency fT = 20 GHz
• SIEGET 25-Line
Infineon Technologies Grounded Emitter Transistor-
25 GHz fT-Line
• Space Qualified
ESA/SCC Detail Spec. No.: 5611/008
Type Variant No. 01
4
1
3
2
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
BFY405 (ql)
Marking Ordering Code
- see below
Pin Configuration
1 23 4
CEBE
Package
Micro-X
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
(see order instructions for ordering example)
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
Q62702F1661
on request
on request
Q62702F1710
Semiconductor Group
1 of 5
Draft B, September 99
BFY405
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
TS ≤ 145°C 1), 2)
Junction temperature
Operating temperature range
Storage temperature range
Thermal Resistance
Junction-soldering point 2)
Symbol
VCEO
VCBO
VEBO
IC
IB
Ptot
Values
4.5
15
1.5
12
1.0
55
Tj 175
Top -65...+175
Tstg -65...+175
Rth JS
< 545
Notes.:
1) At TS = + 145 °C. For TS > + 145 °C derating is required.
2) TS is measured on the collector lead at the soldering point to the pcb.
Unit
V
V
V
mA
mA
mW
°C
°C
°C
K/W
Electrical Characteristics
at TA=25°C; unless otherwise specified
Parameter
DC Characteristics
Collector-base cutoff current
VCB = 5 V, IE = 0
Collector-emitter cutoff current 1.)
VCE = 4.5 V, IB = 0.1µA
Emitter-base cuttoff current
VEB = 1.5 V, IC = 0
DC current gain
IC = 5 mA, VCE = 1 V
Notes:
1.) This Test assures V(BR)CE0 > 4.5V
Symbol
min.
Values
typ. max.
Unit
ICBO
-
- 10 nA
ICEX
IEBO
-
-
- 20 µA
(t.b.d.)
- 5.0 µA
hFE 50 90 150 -
Semiconductor Group
2 of 5
Draft B, September 99
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