파트넘버.co.kr BFY196S 데이터시트 PDF


BFY196S 반도체 회로 부품 판매점

HiRel NPN Silicon RF Transistor



Infineon Technologies AG 로고
Infineon Technologies AG
BFY196S 데이터시트, 핀배열, 회로
HiRel NPN Silicon RF Transistor
BFY196
HiRel Discrete and Microwave Semiconductor
For low noise, high-gain amplifiers up to 2GHz.
For linear broadband amplifiers
Hermetically sealed microwave package
fT= 6,5 GHz
F = 3 dB at 2 GHz
Space Qualification Expected 1998
ESA/SCC Detail Spec. No.: 5611/006
Type Variant No. 07 (tbc.)
4
1
3
2
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
BFY196 (ql)
Marking Ordering Code
Pin Configuration Package
- see below
C E B E Micro-X1
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
(see order instructions for ordering example)
Ordering Code:
Ordering Code:
Ordering Code:
Q62702F1684
on request
on request
Semiconductor Group
1 of 5
Draft B, September 99


BFY196S 데이터시트, 핀배열, 회로
BFY196
Maximum Ratings
Parameter
Symbol Values
Unit
Collector-emitter voltage
Collector-emitter voltage, VBE=0
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
TS 105°C 2), 3)
Junction temperature
Operating temperature range
Storage temperature range
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
Top
Tstg
12
20
20
2
100
12 1)
700
200
-65...+200
-65...+200
V
V
V
V
mA
mA
mW
°C
°C
°C
Thermal Resistance
Junction-soldering point 3.)
Rth JS
< 135
K/W
Notes.:
1) The maximum permissible base current for VFBE measurements is 50mA (spot-
measurement duration < 1s)
2) At TS = + 105 °C. For TS > + 105 °C derating is required.
3) TS is measured on the collector lead at the soldering point to the pcb.
Electrical Characteristics
at TA=25°C; unless otherwise specified
Parameter
DC Characteristics
Collector-base cutoff current
VCB = 20 V, IE = 0
Collector-emitter cutoff current
VCE = 12 V, IB = 1µA 1.)
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter base cuttoff current
VEB = 2 V, IC = 0
Emitter base cuttoff current
VEB = 1 V, IC = 0
Notes:
1.) This Test assures V(BR)CE0 > 12V
Symbol
min.
Values
Unit
typ. max.
ICBO
ICEX
ICBO
IEBO
IEBO
-
-
-
-
-
-
-
-
-
-
100 µA
1000 µA
50 nA
25 µA
0.5 µA
Semiconductor Group
2 of 5
Draft B, September 99




PDF 파일 내의 페이지 : 총 5 페이지

제조업체: Infineon Technologies AG

( infineon )

BFY196S transistor

데이터시트 다운로드
:

[ BFY196S.PDF ]

[ BFY196S 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


BFY196

HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain amplifiers up to 2 GHz.) - Siemens Semiconductor Group



BFY196

HiRel NPN Silicon RF Transistor - Infineon Technologies AG



BFY196H

HiRel NPN Silicon RF Transistor - Infineon Technologies AG



BFY196P

HiRel NPN Silicon RF Transistor - Infineon Technologies AG



BFY196S

HiRel NPN Silicon RF Transistor - Infineon Technologies AG