BFY196 반도체 회로 부품 판매점
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain amplifiers up to 2 GHz.)
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 Siemens Semiconductor Group |
HiRel NPN Silicon RF Transistor
BFY 196
Features
¥ HiRel Discrete and Microwave Semiconductor
¥ For low noise, high gain amplifiers up to 2 GHz.
¥ For linear broadband amplifiers
¥ Hermetically sealed microwave package
¥ fT = 6.5 GHz, F = 3 dB at 2 GHz
¥ ESA Qualification pending
Micro-X1
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BFY 196 (ql)
Marking Ordering Code
- see below
Pin Configuration
C EBE
Package
Micro-X1
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1684
H: High Rel Quality,
Ordering Code: on request
S: Space Quality,
Ordering Code: on request
(see Chapter Order Instructions for ordering example)
Table 1
Maximum Ratings
Parameter
Symbol Limit Values
Unit
Collector-emitter voltage
Collector-emitter voltage, VBE = 0
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS £ 104 °C 2)
Junction temperature
Operating temperature range
Storage temperature range
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
Top
Tstg
12
20
20
2
100
12 1)
700
200
- 65 É + 200
- 65 É + 200
V
V
V
V
mA
mA
mW
°C
°C
°C
Thermal Resistance
Junction soldering point 2)
Rth JS
< 135
K/W
1) The maximum permissible base current for VFBE measurements is 50 mA (spot measurement duration < 1 s).
2) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group 1 Draft A03 1998-04-01
BFY 196
Electrical Characteristics
Table 2
DC Characteristics at TA = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
min. typ.
max.
Collector-base cutoff current
VCB = 20 V, IE = 0
Collector-emitter cutoff current
VCE = 12 V, IB = 1 mA 3)
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
Base-emitter forward voltage
IE = 50 mA, IC = 0
DC current gain
IC = 50 mA, VCE = 8 V
ICBO
ICEX
ICBO
IEBO
IEBO
VFBE
hFE
- - 100
- - 1000
- - 50
- - 25
- - 0.5
--1
50 100 175
3) This test assures V(BR)CE0 > 12 V.
Unit
mA
mA
nA
mA
mA
V
-
Semiconductor Group 2 Draft A03 1998-04-01
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제조업체: Siemens Semiconductor Group
( siemens )
BFY196 transistor
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전력반도체 문의 : 010-3582-2743
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