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Infineon Technologies AG |
HiRel NPN Silicon RF Transistor
BFY193
• HiRel Discrete and Microwave Semiconductor
• For low noise, high-gain amplifiers up to 2GHz.
• For linear broadband amplifiers
• Hermetically sealed microwave package
• fT= 8 GHz
F = 2.3 dB at 2 GHz
• Space Qualified
ESA/SCC Detail Spec. No.: 5611/006
Type Variant No. 06
4
1
3
2
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
BFY193 (ql)
Marking Ordering Code
- see below
Pin Configuration
1 23 4
CEBE
Package
Micro-X1
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
(see order instructions for ordering example)
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
Q62702F1610
on request
on request
Q62702F1701
Semiconductor Group
1 of 5
Draft B, September 99
BFY193
Maximum Ratings
Parameter
Symbol Values
Unit
Collector-emitter voltage
Collector-emitter voltage, VBE=0
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
TS ≤ 104°C 2), 3)
Junction temperature
Operating temperature range
Storage temperature range
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
Top
Tstg
12
20
20
2
80
10 1)
580
200
-65...+200
-65...+200
V
V
V
V
mA
mA
mW
°C
°C
°C
Thermal Resistance
Junction-soldering point 3)
Rth JS
< 165
K/W
Notes.:
1) The maximum permissible base current for VFBE measurements is 30mA (spot-
measurement duration < 1s)
2) At TS = + 104 °C. For TS > + 104 °C derating is required.
3) TS is measured on the collector lead at the soldering point to the pcb.
Electrical Characteristics
at TA=25°C; unless otherwise specified
Parameter
DC Characteristics
Collector-base cutoff current
VCB = 20 V, IE = 0
Collector-emitter cutoff current
VCE = 12 V, IB = 0,5µA 1.)
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter base cuttoff current
VEB = 2 V, IC = 0
Emitter base cuttoff current
VEB = 1 V, IC = 0
Notes:
1.) This Test assures V(BR)CE0 > 12V
Symbol
min.
Values
Unit
typ. max.
ICBO
ICEX
ICBO
IEBO
IEBO
-
-
-
-
-
-
-
-
-
-
100 µA
600 µA
50 nA
25 µA
0.5 µA
Semiconductor Group
2 of 5
Draft B, September 99
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