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BFY183P 반도체 회로 부품 판매점

HiRel NPN Silicon RF Transistor



Infineon Technologies AG 로고
Infineon Technologies AG
BFY183P 데이터시트, 핀배열, 회로
HiRel NPN Silicon RF Transistor
BFY183
HiRel Discrete and Microwave Semiconductor
For low noise, high-gain broadband amplifiers at collector
currents from 2mA to 30mA.
Hermetically sealed microwave package
fT= 8 GHz
F = 2.3 dB at 2 GHz
qualified
ESA/SCC Detail Spec.
No.: 5611/006
4
1
3
2
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
BFY183 (ql)
Marking Ordering Code Pin Configuration Package
- see below
C E B E Micro-X1
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
(see order instructions for ordering example)
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
Q62702F1609
on request
on request
Q62702F1713
Infineon Technology AG
1 of 5
Draft A, Jul. 0101


BFY183P 데이터시트, 핀배열, 회로
BFY183
Maximum Ratings
Parameter
Symbol Values
Unit
Collector-emitter voltage
Collector-emitter voltage, VBE=0
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
TS 99°C 2.)
Junction temperature
Operating temperature range
Storage temperature range
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
Top
Tstg
12
20
20
2
65
5 1.)
450
200
-65...+200
-65...+200
V
V
V
V
mA
mA
mW
°C
°C
°C
Thermal Resistance
Junction-soldering point 2.)
Rth JS
< 225
K/W
Notes.:
1) The maximum permissible base current for VFBE measurements is 20mA (spot-
measurement duration < 1s)
2) TS is measured on the collector lead at the soldering point to the pcb.
Electrical Characteristics
at TA=25°C; unless otherwise specified
Parameter
DC Characteristics
Collector-base cutoff current
VCB = 20 V, IE = 0
Collector-emitter cutoff current
VCE = 12 V, IB = 0,3µA 1.)
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter base cuttoff current
VEB = 2 V, IC = 0
Emitter base cuttoff current
VEB = 1 V, IC = 0
Notes:
1.) This Test assures V(BR)CE0 > 12V
Infineon Technology AG
Symbol
min.
ICBO
ICEX
ICBO
IEBO
IEBO
-
-
-
-
-
2 of 5
Values
Unit
typ. max.
- 100 µA
- 300 µA
- 50 nA
- 25 µA
- 0.5 µA
Draft A, Jul. 0101




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BFY183P transistor

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