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Infineon Technologies AG |
HiRel NPN Silicon RF Transistor
BFY183
• HiRel Discrete and Microwave Semiconductor
• For low noise, high-gain broadband amplifiers at collector
currents from 2mA to 30mA.
• Hermetically sealed microwave package
• fT= 8 GHz
F = 2.3 dB at 2 GHz
• qualified
• ESA/SCC Detail Spec.
No.: 5611/006
4
1
3
2
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
BFY183 (ql)
Marking Ordering Code Pin Configuration Package
- see below
C E B E Micro-X1
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
(see order instructions for ordering example)
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
Q62702F1609
on request
on request
Q62702F1713
Infineon Technology AG
1 of 5
Draft A, Jul. 0101
BFY183
Maximum Ratings
Parameter
Symbol Values
Unit
Collector-emitter voltage
Collector-emitter voltage, VBE=0
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
TS ≤ 99°C 2.)
Junction temperature
Operating temperature range
Storage temperature range
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
Top
Tstg
12
20
20
2
65
5 1.)
450
200
-65...+200
-65...+200
V
V
V
V
mA
mA
mW
°C
°C
°C
Thermal Resistance
Junction-soldering point 2.)
Rth JS
< 225
K/W
Notes.:
1) The maximum permissible base current for VFBE measurements is 20mA (spot-
measurement duration < 1s)
2) TS is measured on the collector lead at the soldering point to the pcb.
Electrical Characteristics
at TA=25°C; unless otherwise specified
Parameter
DC Characteristics
Collector-base cutoff current
VCB = 20 V, IE = 0
Collector-emitter cutoff current
VCE = 12 V, IB = 0,3µA 1.)
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter base cuttoff current
VEB = 2 V, IC = 0
Emitter base cuttoff current
VEB = 1 V, IC = 0
Notes:
1.) This Test assures V(BR)CE0 > 12V
Infineon Technology AG
Symbol
min.
ICBO
ICEX
ICBO
IEBO
IEBO
-
-
-
-
-
2 of 5
Values
Unit
typ. max.
- 100 µA
- 300 µA
- 50 nA
- 25 µA
- 0.5 µA
Draft A, Jul. 0101
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