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Infineon Technologies AG |
HiRel NPN Silicon RF Transistor
BFY181
• HiRel Discrete and Microwave Semiconductor
• For low noise, high-gain broadband amplifiers at collector
currents from 0,5 mA to 12 mA.
• Hermetically sealed microwave package
• fT= 8 GHz
F = 2.2 dB at 2 GHz
• Space Qualified
ESA/SCC Detail Spec. No.: 5611/006
Type Variant No. 03
4
1
3
2
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
BFY181 (ql)
Marking Ordering Code
Pin Configuration Package
- see below
C E B E Micro-X1
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
(see order instructions for ordering example)
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
Q62702F1607
on request
on request
Q62702F1715
Semiconductor Group
1 of 5
Draft B, September 99
BFY181
Maximum Ratings
Parameter
Symbol Values
Unit
Collector-emitter voltage
Collector-emitter voltage, VBE=0
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
TS ≤ 137°C 2), 3)
Junction temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
12
20
20
2
20
2 1)
175
200
V
V
V
V
mA
mA
mW
°C
Operating temperature range
Storage temperature range
Top -65...+200
Tstg -65...+200
°C
°C
Thermal Resistance
Junction-soldering point 3)
Rth JS
< 360
K/W
Notes.:
1) The maximum permissible base current for VFBE measurements is 15mA (spot-
measurement duration < 1s)
2) At TS = + 137 °C. For TS > + 137 °C derating is required.
3) TS is measured on the collector lead at the soldering point to the pcb.
Electrical Characteristics
at TA=25°C; unless otherwise specified
Parameter
DC Characteristics
Collector-base cutoff current
VCB = 20 V, IE = 0
Collector-emitter cutoff current
VCE = 12 V, IB = 0,1µA 1.)
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter base cuttoff current
VEB = 2 V, IC = 0
Emitter base cuttoff current
VEB = 1 V, IC = 0
Notes:
1.) This Test assures V(BR)CE0 > 12V
Symbol
min.
Values
Unit
typ. max.
ICBO
ICEX
ICBO
IEBO
IEBO
-
-
-
-
-
-
-
-
-
-
100 µA
100 µA
50 nA
25 µA
0.5 µA
Semiconductor Group
2 of 5
Draft B, September 99
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