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BFY180P 반도체 회로 부품 판매점

HiRel NPN Silicon RF Transistor



Infineon Technologies AG 로고
Infineon Technologies AG
BFY180P 데이터시트, 핀배열, 회로
HiRel NPN Silicon RF Transistor
BFY180
HiRel Discrete and Microwave Semiconductor
For low power amplifiers at collector currents from 0,2 mA
to 2,5 mA.
Hermetically sealed microwave package
fT= 6,5 GHz
F = 2.6 dB at 2 GHz
Space Qualified
ESA/SCC Detail Spec. No.: 5611/006
Type Variant No. 01
4
1
3
2
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
BFY180 (ql)
Marking Ordering Code
Pin Configuration Package
- see below
C E B E Micro-X1
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
(see order instructions for ordering example)
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
Q97301013
on request
on request
Q97111419
Semiconductor Group
1 of 5
Draft B, September 99


BFY180P 데이터시트, 핀배열, 회로
BFY180
Maximum Ratings
Parameter
Symbol Values
Unit
Collector-emitter voltage
Collector-emitter voltage, VBE=0
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
TS 176°C 2), 3)
Junction temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
8
15
15
2
4
0.5 1)
30
200
V
V
V
V
mA
mA
mW
°C
Operating temperature range
Storage temperature range
Top -65...+200
Tstg -65...+200
°C
°C
Thermal Resistance
Junction-soldering point 3)
Rth JS
< 805
Notes.:
1) The maximum permissible base current for VFBE measurements is 3mA (spot-
measurement duration < 1s)
2) At TS = + 176 °C. For TS > + 176 °C derating is required.
3) TS is measured on the collector lead at the soldering point to the pcb.
K/W
Electrical Characteristics
at TA=25°C; unless otherwise specified
Parameter
DC Characteristics
Collector-base cutoff current
VCB = 10 V, IE = 0
Collector-emitter cutoff current
VCE = 8 V, IB = 0,05µA 1.)
Collector-base cutoff current
VCB = 8 V, IE = 0
Emitter base cuttoff current
VEB = 2 V, IC = 0
Emitter base cuttoff current
VEB = 1 V, IC = 0
Notes:
1.) This Test assures V(BR)CE0 > 8V
Symbol
min.
Values
Unit
typ. max.
ICBO
ICEX
ICBO
IEBO
IEBO
-
-
-
-
-
-
-
-
-
-
100 µA
50 µA
50 nA
25 µA
0.5 µA
Semiconductor Group
2 of 5
Draft B, September 99




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BFY180P transistor

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