BFW92A 반도체 회로 부품 판매점
Silicon NPN Planar RF Transistor
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 Vishay Telefunken |
Silicon NPN Planar RF Transistor
BFW92A
Vishay Telefunken
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Wide band RF amplifier up to GHz range.
Features
D High power gain
D Low noise figure
3
2
94 9308
1
BFW92A Marking: BFW92A
Plastic case (TO 50)
1 = Collector, 2 = Emitter, 3 = Base
13623
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb ≤ 60 °C
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
25
15
2.5
25
300
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3
plated with 35mm Cu
Symbol
RthJA
Value
300
Unit
K/W
Document Number 85041
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
1 (7)
BFW92A
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
VCE = 25 V, VBE = 0
Collector-base cut-off current
VCB = 10 V, IE = 0
Emitter-base cut-off current
VEB = 2.5 V, IC = 0
Collector-emitter breakdown voltage IC = 1 mA, IB = 0
Collector-emitter saturation voltage IC = 20 mA, IB = 2 mA
DC forward current transfer ratio VCE = 1 V, IC = 2 mA
VCE = 1 V, IC = 25 mA
Symbol Min Typ Max Unit
ICES
100 mA
ICBO
IEBO
100 nA
10 mA
V(BR)CEO 15
V
VCEsat
0.1 0.6 V
hFE 20 50 150
hFE 20
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Linear output voltage – two
tone intermodulation test
Test Conditions
VCE = 5 V, IC = 2 mA, f = 300 MHz
VCE = 5 V, IC = 14 mA, f = 300 MHz
VCE = 5 V, IC = 25 mA, f = 300 MHz
VCB = 5 V, f = 1 MHz
VCE = 5 V, f = 1 MHz
WVEB = 0.5 V, f = 1 MHz
VCE = 5 V, IC = 2 mA, ZS = 50 ,
f = 800 MHz
WVCE = 10 V, IC = 14 mA, ZS = 50 ,
f = 800 MHz
VCE = 10 V, IC = 14 mA, dIM = 60 dB,
Wf1 = 806 MHz, f2 = 810 MHz,
ZS = ZL = 50
Symbol Min Typ Max Unit
fT 1.5 GHz
fT 3.5 GHz
fT 3.2 GHz
Ccb 0.45 pF
Cce 0.3 pF
Ceb 1.4 pF
F 2.5 dB
Gpe
V1 = V2
13
150
dB
mV
www.vishay.de • FaxBack +1-408-970-5600
2 (7)
Document Number 85041
Rev. 3, 20-Jan-99
|
PDF 파일 내의 페이지 : 총 7 페이지
제조업체: Vishay Telefunken
( vishay )
BFW92A transistor
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[ BFW92A.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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