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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D124
BFU540
NPN SiGe wideband transistor
Product specification
Supersedes data of 2002 Jan 28
2003 Jun 12
Philips Semiconductors
NPN SiGe wideband transistor
Product specification
BFU540
FEATURES
• Very high power gain
• Very low noise figure
• High transition frequency
• Emitter is thermal lead
• Low feedback capacitance
• 45 GHz SiGe process.
PINNING
PIN
1
2
3
4
DESCRIPTION
emitter
base
emitter
collector
APPLICATIONS
• RF front end
• Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
• Radar detectors
• Pagers
• Satellite television tuners (SATV)
• High frequency oscillators.
DESCRIPTION
NPN SiGe wideband transistor for low voltage applications
in a plastic, 4-pin dual-emitter SOT343R package.
handbook, halfpage
3
4
2
Top view
1
MSB842
Marking code: A4.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCBO
VCEO
IC
Ptot
hFE
Gmax
NF
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
maximum power gain
noise figure
open emitter
open base
Ts ≤ 98 °C
IC = 40 mA; VCE = 2 V; Tj = 25 °C
IC = 40 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C
IC = 2 mA; VCE = 2 V; f = 2 GHz; ΓS = Γopt
−
−
−
−
70
−
−
−9V
− 2.3 V
40 50 mA
− 115 mW
140 210
20 −
dB
0.9 −
dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Jun 12
2
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