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BFU540 반도체 회로 부품 판매점

NPN SiGe wideband transistor



NXP Semiconductors 로고
NXP Semiconductors
BFU540 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D124
BFU540
NPN SiGe wideband transistor
Product specification
Supersedes data of 2002 Jan 28
2003 Jun 12


BFU540 데이터시트, 핀배열, 회로
Philips Semiconductors
NPN SiGe wideband transistor
Product specification
BFU540
FEATURES
Very high power gain
Very low noise figure
High transition frequency
Emitter is thermal lead
Low feedback capacitance
45 GHz SiGe process.
PINNING
PIN
1
2
3
4
DESCRIPTION
emitter
base
emitter
collector
APPLICATIONS
RF front end
Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
Radar detectors
Pagers
Satellite television tuners (SATV)
High frequency oscillators.
DESCRIPTION
NPN SiGe wideband transistor for low voltage applications
in a plastic, 4-pin dual-emitter SOT343R package.
handbook, halfpage
3
4
2
Top view
1
MSB842
Marking code: A4.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCBO
VCEO
IC
Ptot
hFE
Gmax
NF
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
maximum power gain
noise figure
open emitter
open base
Ts 98 °C
IC = 40 mA; VCE = 2 V; Tj = 25 °C
IC = 40 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C
IC = 2 mA; VCE = 2 V; f = 2 GHz; ΓS = Γopt
70
9V
2.3 V
40 50 mA
115 mW
140 210
20
dB
0.9
dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Jun 12
2




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BFU540

NPN SiGe wideband transistor - NXP Semiconductors