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PDF BFT25A Data sheet ( Hoja de datos )
| Número de pieza | BFT25A | |
| Descripción | NPN 5GHz wideband transistor | |
| Fabricantes | NXP Semiconductors | |
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BFT25A
NPN 5 GHz wideband transistor
Rev. 5 — 12 September 2011
Product data sheet
1. Product profile
1.1 General description
The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power
amplifiers, such as pocket telephones and paging systems with signal frequencies up
to 2 GHz.
The transistor is encapsulated in a 3-pin plastic SOT23 envelope.
1.2 Features and benefits
Low current consumption (100 A to 1 mA)
Low noise figure
Gold metallization ensures excellent reliability.
1.3 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VCBO
collector-base
voltage
open emitter
- - 8V
VCEO
collector-emitter open base
voltage
- - 5V
IC DC collector
current
- - 6.5 mA
Ptot
total power
up to Ts = 165 C
[1] - - 32 mW
dissipation
hFE
DC current gain IC = 0.5 mA; VCE = 1 V
50 80 200
fT
transition
IC = 1 mA; VCE = 1 V;
3.5 5
-
GHz
frequency
Tamb = 25 C;
f = 500 MHz
GUM
maximum
unilateral power
gain
IC = 0.5 mA; VCE = 1 V;
Tamb = 25 C;
f = 1 GHz
-
15 -
dB
F
noise figure
= opt; IC = 0.5 mA;
- 1.8 - dB
VCE = 1 V;
Tamb = 25 C; f = 1 GHz
= opt; IC = 1 mA;
VCE = 1 V;
Tamb = 25 C; f = 1 GHz
-
2-
dB
[1] Ts is the temperature at the soldering point of the collector tab.
1 page  
NXP Semiconductors
BFT25A
NPN 5 GHz wideband transistor
25
gain
(dB)
20
GUM
mcd104
15
MSG
10
5
0
0 0.5 1.0 1.5 2.0
IC (mA)
VCE = 1 V; f = 500 MHz.
Fig 5. Gain as a function of collector current.
50
gain
(dB)
40
30
GUM
mcd106
20 MSG
10
Gmax
0
10 102 103 f (MHz) 104
VCE = 1 V; IC = 0.5 mA.
Fig 7. Gain as a function of frequency.
20
gain
(dB)
15
GUM
mcd105
10
MSG
5
0
0 0.5 1.0 1.5 2.0
IC (mA)
VCE = 1 V; f = 1 GHz.
Fig 6. Gain as a function of collector current.
50
gain
(dB)
40
30
20
GUM
MSG
mcd107
10
Gmax
0
10 102 103 f (MHz) 104
VCE = 1 V; IC = 1 mA.
Fig 8. Gain as a function of frequency.
BFT25A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 12 September 2011
© NXP B.V. 2011. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
8. Package outline
Plastic surface-mounted package; 3 leads
BFT25A
NPN 5 GHz wideband transistor
SOT23
DB
E AX
3
1
e1 bp
e
2
wM B
HE v M A
A
A1
Q
detail X
Lp
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
mm
1.1
0.9
0.1 0.48 0.15 3.0
0.38 0.09 2.8
E
1.4
1.2
e
e1 HE Lp
Q
v
1.9
0.95
2.5
2.1
0.45 0.55
0.15 0.45
0.2
w
0.1
OUTLINE
VERSION
SOT23
IEC
Fig 18. Package outline.
BFT25A
Product data sheet
REFERENCES
JEDEC
JEITA
TO-236AB
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 12 September 2011
© NXP B.V. 2011. All rights reserved.
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| PDF Descargar | [ Datasheet BFT25A.PDF ] | |
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