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BFS483 반도체 회로 부품 판매점

Low Noise Silicon Bipolar RF Transistor



Infineon Technologies AG 로고
Infineon Technologies AG
BFS483 데이터시트, 핀배열, 회로
Low Noise Silicon Bipolar RF Transistor
For low noise, high-gain broadband amplifiers at
collector currents from 2 mA to 30 mA
fT = 8 GHz, NFmin = 0.9 dB at 900 MHz
Two (galvanic) internal isolated Transistor in
one package
For orientation in reel see package
information below
Pb-free (RoHS compliant) and halogen-free package
with visible leads
Qualification report according to AEC-Q101 available
BFS483
4
5
6
3
2
1
C1 E2 B2
654
TR2
TR1
123
B1 E1 C2
EHA07196
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFS483
Marking
Pin Configuration
Package
RHs 1=B 2=E 3=C 4=B 5=E 6=C SOT363
1 2013-07-25


BFS483 데이터시트, 핀배열, 회로
BFS483
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS 40 °C
Junction temperature
Ambient temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TA
TStg
Value
12
20
20
2
65
5
450
150
-65 ... 150
-65 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Parameter
Junction - soldering point2)
Symbol
RthJS
Value
245
Unit
K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 15 mA, VCE = 8 V, pulse measured
V(BR)CEO 12
-
-V
ICES
- - 100 µA
ICBO
- - 100 nA
IEBO
- - 1 µA
hFE 70 100 140 -
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
2 2013-07-25




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BFS483 transistor

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