BFS480 반도체 회로 부품 판매점
NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
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 Siemens Semiconductor Group |
NPN Silicon RF Transistor
• For low noise, low-power amplifiers in mobile
communication systems (pager, cordless
telephone) at collector currents from 0.2mA to 8mA
• fT = 7GHz
F = 1.5dB at 900MHz
• Two (galvanic) internal isolated
Transistors in one package
BFS 480
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFS 480 REs
Q62702-F1531
1/4 = B 2/5 = E 3/6 = C
Package
SOT-363
data below is of a single transistor
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 112 °C
Junction temperature
Ambient temperature
Storage temperature
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
Thermal Resistance
Junction - soldering point 1)
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
8
10
10
2
10
1.2
80
150
- 65 ... + 150
- 65 ... + 150
≤ 470
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-16-1996
BFS 480
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 10 V, VBE = 0
Collector-base cutoff current
VCB = 8 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 3 mA, VCE = 5 V
V(BR)CEO
8
ICES
-
ICBO
-
IEBO
-
hFE
30
-
-
-
-
100
max.
-
100
100
1
200
Unit
V
µA
nA
µA
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Semiconductor Group
2
Dec-16-1996
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PDF 파일 내의 페이지 : 총 6 페이지
제조업체: Siemens Semiconductor Group
( siemens )
BFS480 transistor
데이터시트 다운로드 :
[ BFS480.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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