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Diotec Semiconductor |
BFS 20
NPN
High Frequency Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
2.9 ±0.1
0.4
3
Type
Code
1
1.9
2
1.1
Dimensions / Maße in mm
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Collector current – Kollektor-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
VCE0
VCB0
VEB0
Ptot
IC
ICM
Tj
TS
Grenzwerte (TA = 25/C)
BFS 20
20 V
30 V
4V
250 mW 1)
25 mA
25 mA
150/C
- 65…+ 150/C
Characteristics (Tj = 25/C)
Collector - Base cut-off current – Kollektorreststrom
IE = 0, VCB = 20 V
ICB0
IE = 0, VCB = 20 V, Tj = 100/C
ICB0
Emitter - Base cut-off current – Emitterreststrom
IC = 0, VEB = 4 V
IEB0
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
– – 100 nA
– – 10 :A
– – 100 nA
1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
4
01.11.2003
High Frequency Transistors
BFS 20
Characteristics (Tj = 25/C)
DC current gain – Kollektor-Basis-Stromverhältnis 1)
VCE = 10 V, IC = 7 mA
hFE
Base-Emitter voltage – Basis-Emitter-Spannung 1)
VCE = 10 V, IC = 7 mA
Gain-Bandwidth Product – Transitfrequenz
VBEon
VCE = 10 V, IC = 5 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Feedback Capacitance – Rückwirkungskapazität
VCB = 10 V, IC = ic = 0, f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
40 85
–
– 740 mV 900 mV
275 MHz 450 MHz
–
– 1 pF –
– 350 fF –
RthA 420 K/W 2)
Marking - Stempelung
BFS 20 = G1
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
5
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