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BFS17A 반도체 회로 부품 판매점

NPN 3 GHz wideband transistor



NXP Semiconductors 로고
NXP Semiconductors
BFS17A 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
BFS17A
NPN 3 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September1995


BFS17A 데이터시트, 핀배열, 회로
Philips Semiconductors
NPN 3 GHz wideband transistor
Product specification
BFS17A
DESCRIPTION
NPN transistor in a plastic SOT23 package.
APPLICATIONS
It is intended for RF applications such as oscillators
in TV tuners.
PINNING
PIN
1 base
2 emitter
3 collector
DESCRIPTION
handbook, halfpage
3
1
Top view
2
MSB003
Marking code: E2p.
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
IC
Ptot
fT
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
GUM
F
maximum unilateral power gain
noise figure
VO output voltage
CONDITIONS
open emitter
open base
up to Ts = 70 °C; note 1
IC = 25 mA; VCE = 5 V; f = 500 MHz;
Tamb = 25 °C
IC = 14 mA; VCE = 10 V; f = 800 MHz
IC = 2 mA; VCE = 5 V; f = 800 MHz;
Tamb = 25 °C
dim = 60 dB; IC = 14 mA; VCE = 10 V;
RL = 75 ; Tamb = 25 °C;
f(p+qr) = 793.25 MHz
TYP.
2.8
13.5
2.5
150
MAX.
25
15
25
300
UNIT
V
V
mA
mW
GHz
dB
dB
mV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
up to Ts = 70 °C; note 1
Note to the Quick reference data and the Limiting values
1. Ts is the temperature at the soldering point of the collector pin.
MIN.
65
MAX.
25
15
2.5
25
50
300
+150
150
UNIT
V
V
V
mA
mA
mW
°C
°C
September1995
2




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BFS17A transistor

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