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Microsemi Corporation |
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
• High Current-Gain – Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA
• Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz
• High Power Gain – Gmax = 14.5dB (typ) @ f = 0.5 GHz
BFR96
Macro T
(STYLE #2)
DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in
applications requiring fast switching times.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
Thermal Data
P
D
Total Device Dissipation @ TC = 100ºC
Derate above 100ºC
Value
15
20
3.0
100
500
10
Unit
Vdc
Vdc
Vdc
mA
mWatts
mW/ ºC
MSC1309.PDF 10-25-99
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
Test Conditions
BVCEO
BVCB0
BVEBO
ICBO
(on)
HFE
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 10 Vdc, VBE = 0 Vdc)
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
DYNAMIC
Symbol
Test Conditions
Ftau
CCB
Current-Gain – Bandwidth Product
(IC = 50 mA, VCE = 10 Vdc, f = 0.5 GHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
BFR96
Min.
15
20
3.0
-
Value
Typ.
-
-
-
-
Max.
-
-
-
100
Unit
Vdc
Vdc
Vdc
nA
30 - 200
-
Min.
-
-
Value
Typ.
5.0
2.6
Max.
-
3.2
Unit
GHz
pF
MSC1309.PDF 10-25-99
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