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Infineon Technologies AG |
NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
fT = 9 GHz
F = 1.0 dB at 1 GHz
BFR949T
3
2
1 VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFR949T
Marking
RKs
Pin Configuration
1=B
2=E
3=C
Package
SC75
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS 75°C 1)
Junction temperature
Ambient temperature
Storage temperature
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
Value
10
20
20
1.5
70
7
250
150
-65 ... 150
-65 ... 150
Thermal Resistance
Junction - soldering point2)
RthJS
300
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
K/W
1 Oct-24-2001
BFR949T
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 10
-
-V
Base-emitter forward voltage
IE = 25mA
Collector-base cutoff current
VCB = 10 V, IE = 0
VBEF
ICBO
- - 1.05
- - 100 nA
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 5 mA, VCE = 6 V
IEBO
hFE
- - 0.1 µA
100 140 200 -
2 Oct-24-2001
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