파트넘버.co.kr BFR949T 데이터시트 PDF


BFR949T 반도체 회로 부품 판매점

NPN Silicon RF Transistor



Infineon Technologies AG 로고
Infineon Technologies AG
BFR949T 데이터시트, 핀배열, 회로
NPN Silicon RF Transistor
 For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
 fT = 9 GHz
F = 1.0 dB at 1 GHz
BFR949T
3
2
1 VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFR949T
Marking
RKs
Pin Configuration
1=B
2=E
3=C
Package
SC75
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS  75°C 1)
Junction temperature
Ambient temperature
Storage temperature
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
Value
10
20
20
1.5
70
7
250
150
-65 ... 150
-65 ... 150
Thermal Resistance
Junction - soldering point2)
RthJS
 300
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
K/W
1 Oct-24-2001


BFR949T 데이터시트, 핀배열, 회로
BFR949T
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 10
-
-V
Base-emitter forward voltage
IE = 25mA
Collector-base cutoff current
VCB = 10 V, IE = 0
VBEF
ICBO
- - 1.05
- - 100 nA
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 5 mA, VCE = 6 V
IEBO
hFE
- - 0.1 µA
100 140 200 -
2 Oct-24-2001




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BFR949T transistor

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