(PDF) BFR949 Datasheet - NPN Silicon RF Transistor

Número de pieza	BFR949
Descripción	NPN Silicon RF Transistor
Fabricantes	Infineon Technologies AG
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No Preview Available ! NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 9 GHz F = 1 dB at 1 GHz 3 BFR949F 2 1 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR949F Marking RKs Pin Configuration 1=B 2=E 3=C Package TSFP-3 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 93°C Junction temperature Ambient temperature Storage temperature Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 10 20 20 1.5 35 4 250 150 -65 ... 150 -65 ... 150 Unit V mA mW °C Thermal Resistance Parameter Junction - soldering point2) Symbol RthJS Value 225 Unit K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance 1 Jan-04-2002 1 page

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PDF BFR949 Data sheet ( Hoja de datos )