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Número de pieza | BFR93AW | |
Descripción | NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BFR93AW (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! NPN Silicon RF Transistor
• For low distortion broadband amplifiers and
oscillators up to 2GHz at collector currents from
5 mA to 30 mA
BFR 93AW
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFR 93AW R2s
Q62702-F1489
1=B
2=E
3=C
Package
SOT-323
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 104 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
12
20
20
2
50
6
300
150
- 65 ... + 150
- 65 ... + 150
≤ 155
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-11-1996
1 page BFR 93AW
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
400
mW
Ptot
300
250
TS
200
150 TA
100
50
0
0 20 40 60 80 100 120 °C 150
TA,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3
K/W
RthJS
10 2
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 2
Ptotmax/Ptot-DC
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Semiconductor Group
5
10 0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Dec-11-1996
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet BFR93AW.PDF ] |
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