파트넘버.co.kr BFR92AW 데이터시트 PDF


BFR92AW 반도체 회로 부품 판매점

Silicon NPN Planar RF Transistor



Vishay Telefunken 로고
Vishay Telefunken
BFR92AW 데이터시트, 핀배열, 회로
BFR92A/BFR92AR/BFR92AW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Wide band amplifier up to GHz range.
Features
D High power gain
D Low noise figure
D High transition frequency
11
94 9280
23
BFR92A Marking: +P2
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
1
9510527
32
BFR92AR Marking: +P5
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
13 652
23
BFR92AW Marking: WP2
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
13 570
Document Number 85033
Rev. 3, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600
1 (10)


BFR92AW 데이터시트, 핀배열, 회로
BFR92A/BFR92AR/BFR92AW
Vishay Telefunken
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb 60 °C
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
20
15
2
30
200
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
mplated with 35 m Cu
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
VCE = 20 V, VBE = 0
Collector-base cut-off current
VCB = 10 V, IE = 0
Emitter-base cut-off current
VEB = 2 V, IC = 0
Collector-emitter breakdown voltage IC = 1 mA, IB = 0
DC forward current transfer ratio VCE = 10 V, IC = 14 mA
Symbol
RthJA
Value
450
Unit
K/W
Symbol Min Typ Max Unit
mICES
100 A
ICBO
IEBO
100 nA
10 mA
V(BR)CEO 15
V
hFE 65 100 150
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Linear output voltage – two
tone intermodulation test
Third order intercept point
Test Conditions
VCE = 10 V, IC = 14 mA, f = 500 MHz
VCB = 10 V, f = 1 MHz
VCE = 10 V, f = 1 MHz
WVEB = 0.5 V, f = 1 MHz
VCE = 10 V, IC = 2 mA, ZS = 50 ,
f = 800 MHz
WVCE = 10 V, ZS = 50 , ZL = ZLopt,
IC = 14 mA, f = 800 MHz
VCE = 10 V, IC = 14 mA, dIM = 60 dB,
Wf1 = 806 MHz, f2 = 810 MHz,
ZS = ZL = 50
VCE = 10 V, IC = 14 mA, f = 800 MHz
Symbol Min Typ Max Unit
fT 6 GHz
Ccb 0.3 pF
Cce 0.15 pF
Ceb 0.65 pF
F 1.8 dB
Gpe
V1 = V2
16
120
dB
mV
IP3 24 dBm
www.vishay.de FaxBack +1-408-970-5600
2 (10)
Document Number 85033
Rev. 3, 20-Jan-99




PDF 파일 내의 페이지 : 총 10 페이지

제조업체: Vishay Telefunken

( vishay )

BFR92AW transistor

데이터시트 다운로드
:

[ BFR92AW.PDF ]

[ BFR92AW 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


BFR92A

NPN 5 GHz wideband transistor - NXP Semiconductors



BFR92A

Silicon NPN Planar RF Transistor - Vishay Telefunken



BFR92A

NPN WIDEBAND TRANSISTOR - Diodes Incorporated



BFR92A

SMALL SIGNAL NPN RF TRANSISTOR - TT



BFR92ALT1

RF TRANSISTORS NPN SILICON - Motorola Inc



BFR92AR

Silicon NPN Planar RF Transistor - Vishay Telefunken



BFR92AT

NPN 5 GHz wideband transistor - NXP Semiconductors



BFR92AW

NPN 5 GHz wideband transistor - NXP Semiconductors



BFR92AW

Silicon NPN Planar RF Transistor - Vishay Telefunken