파트넘버.co.kr BFR92 데이터시트 PDF


BFR92 반도체 회로 부품 판매점

Silicon NPN Planar RF Transistor



Vishay Telefunken 로고
Vishay Telefunken
BFR92 데이터시트, 핀배열, 회로
Silicon NPN Planar RF Transistor
BFR92/BFR92R
Vishay Telefunken
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range specially for wide band
antenna amplifier.
Features
D High power gain
D Low noise figure
D High transition frequency
11
94 9280
23
BFR92 Marking: P1
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
9510527
32
BFR92R Marking: P4
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb 60 °C
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
20
15
2
30
200
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35mm Cu
Symbol
RthJA
Value
450
Unit
K/W
Document Number 85032
Rev. 3, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600
1 (9)


BFR92 데이터시트, 핀배열, 회로
BFR92/BFR92R
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
VCE = 20 V, VBE = 0
Collector-base cut-off current
VCB = 10 V, IE = 0
Emitter-base cut-off current
VEB = 2 V, IC = 0
Collector-emitter breakdown voltage IC = 1 mA, IB = 0
DC forward current transfer ratio VCE = 10 V, IC = 14 mA
Symbol Min Typ Max Unit
ICES
100 mA
ICBO
IEBO
100 nA
10 mA
V(BR)CEO 15
V
hFE 25 50 150
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Linear output voltage – two
tone intermodulation test
Third order intercept point
Test Conditions
VCE = 10 V, IC = 14 mA, f = 500 MHz
VCB = 10 V, f = 1 MHz
VCE = 10 V, f = 1 MHz
WVEB = 0.5 V, f = 1 MHz
VCE = 10 V, IC = 2 mA, ZS = 50 ,
f = 500 MHz
VCE = 10 V, IC = 14 mA, ZL = ZLopt,
f = 500 MHz
VCE = 10 V, IC = 14 mA, ZL = ZLopt,
f = 800 MHz
VCE = 10 V, IC = 14 mA, dIM = 60 dB,
Wf1 = 806 MHz, f2 = 810 MHz,
ZS = ZL = 50
VCE = 10 V, IC = 14 mA, f = 800 MHz
Symbol Min Typ Max Unit
fT 5 GHz
Ccb 0.4 pF
Cce 0.15 pF
Ceb 1.3 pF
F 2.2 dB
Gpe
Gpe
V1 = V2
19.5
14
110
dB
dB
mV
IP3 23.5 dBm
www.vishay.de FaxBack +1-408-970-5600
2 (9)
Document Number 85032
Rev. 3, 20-Jan-99




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제조업체: Vishay Telefunken

( vishay )

BFR92 transistor

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