파트넘버.co.kr BFR91A 데이터시트 PDF


BFR91A 반도체 회로 부품 판매점

Silicon NPN Planar RF Transistor



Vishay Telefunken 로고
Vishay Telefunken
BFR91A 데이터시트, 핀배열, 회로
Silicon NPN Planar RF Transistor
BFR91A
Vishay Telefunken
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range specially for wide band antenna amplifier.
Features
D High power gain
D Low noise figure
D High transition frequency
3
2
94 9308
1
BFR91A Marking: BFR91A
Plastic case (TO 50)
1 = Collector, 2 = Emitter, 3 = Base
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb 60 °C
13623
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
20
12
2
50
300
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3
plated with 35mm Cu
Symbol
RthJA
Value
300
Unit
K/W
Document Number 85031
Rev. 3, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600
1 (8)


BFR91A 데이터시트, 핀배열, 회로
BFR91A
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
VCE = 20 V, VBE = 0
Collector-base cut-off current
VCB = 20 V, IE = 0
Emitter-base cut-off current
VEB = 2 V, IC = 0
Collector-emitter breakdown voltage IC = 1 mA, IB = 0
Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA
DC forward current transfer ratio VCE = 5 V, IC = 30 mA
Symbol Min Typ Max Unit
ICES
100 mA
ICBO
IEBO
100 nA
10 mA
V(BR)CEO 12
V
VCEsat
0.1 0.4 V
hFE 40 90 150
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Linear output voltage – two
tone intermodulation test
Third order intercept point
Test Conditions
VCE = 5 V, IC = 30 mA, f = 500 MHz
VCB = 5 V, f = 1 MHz
VCE = 10 V, f = 1 MHz
WVEB = 0.5 V, f = 1 MHz
VCE = 8 V, ZS = 50 , f = 800 MHz,
WIC = 5 mA
VCE = 8 V, ZS = 50 , f = 800 MHz,
WIC = 30 mA
VCE = 8 V, IC = 30 mA, ZS = 50 ,
ZL = ZLopt, f = 800 MHz
VCE = 8 V, IC = 30 mA, dIM = 60 dB,
Wf1 = 806 MHz, f2 = 810 MH,
ZS = ZL = 50
VCE = 8 V, IC = 30 mA, f = 800 MHz
Symbol Min Typ Max Unit
fT 6 GHz
Ccb 0.4 pF
Cce 0.3 pF
Ceb 1.5 pF
F 1.6 dB
F 2.3 dB
Gpe
V1 = V2
14
280
dB
mV
IP3 32 dBm
www.vishay.de FaxBack +1-408-970-5600
2 (8)
Document Number 85031
Rev. 3, 20-Jan-99




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BFR91A transistor

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