(PDF) BFR380T Datasheet - NPN Silicon RF Transistor

Número de pieza	BFR380T
Descripción	NPN Silicon RF Transistor
Fabricantes	Infineon Technologies AG
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No Preview Available ! BFR380T NPN Silicon RF Transistor Preliminary data 3 High current capability and low figure for wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz Low noise figure: 1.1 dB at 1.8 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR380T Marking Pin Configuration FCs 1=B 2=E 3=C Package SC75 Maximum Ratings Parameter Symbol Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 66°C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Thermal Resistance Parameter Symbol Junction - soldering point2) RthJS 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance Value 6 15 15 2 80 14 380 150 -65 ... 150 -65 ... 150 Value 220 Unit V mA mW °C Unit K/W 1 Jul-01-2003 1 page

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PDF BFR380T Data sheet ( Hoja de datos )