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PDF BFR380L3 Data sheet ( Hoja de datos )
| Número de pieza | BFR380L3 | |
| Descripción | Linear Low Noise Silicon Bipolar RF Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Linear Low Noise Silicon Bipolar RF Transistor
• High current capability and low noise figure for
wide dynamic range
• Collector design supports supply voltage up to 5V
• Ideal for low phase noise oscillators up to 3.5 GHz
• Low noise figure 1.1 dB at 1.8 GHz
• Pb-free (RoHS compliant) and halogen-free thin
small leadless package
• Qualification report according to AEC-Q101 available
BFR380L3
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR380L3
Marking
Pin Configuration
FC
1=B
2=E
3=C
Package
TSLP-3-1
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS ≤ 96°C
Junction temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TStg
6
15
15
2
80
14
380
150
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
140
1TS is measured on the collector lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
1 2013-08-29
1 page  
Package TSLP-3-1
BFR380L3
5 2013-08-29
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BFR380L3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BFR380L3 | Linear Low Noise Silicon Bipolar RF Transistor | Infineon Technologies AG |
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