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BFR35AP 반도체 회로 부품 판매점

NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA)



Siemens Semiconductor Group 로고
Siemens Semiconductor Group
BFR35AP 데이터시트, 핀배열, 회로
NPN Silicon RF Transistor
• For low distortion broadband amplifiers and
oscillators up to 2GHz at collector currents from
0.5mA to 20mA
BFR 35AP
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFR 35AP GEs
Q62702-F938
1=B
2=E
3=C
Package
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS 48 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
15
20
20
2.5
30
4
280
150
- 65 ... + 150
- 65 ... + 150
365
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-12-1996


BFR35AP 데이터시트, 핀배열, 회로
BFR 35AP
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2.5 V, IC = 0
DC current gain
IC = 15 mA, VCE = 8 V
V(BR)CEO
15
ICES
-
ICBO
-
IEBO
-
hFE
40
-
-
-
-
100
max.
-
10
100
100
200
Unit
V
µA
nA
µA
-
Semiconductor Group
2
Dec-12-1996




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제조업체: Siemens Semiconductor Group

( siemens )

BFR35AP transistor

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