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BFR340T 반도체 회로 부품 판매점

NPN Silicon RF Transistor



Infineon Technologies AG 로고
Infineon Technologies AG
BFR340T 데이터시트, 핀배열, 회로
BFR340T
NPN Silicon RF Transistor
Preliminary data
 Low voltage/ low current operation
 Transition frequency of 14 GHz
 High insertion gain
 Ideal for low current amplifiers and oscillators
3
2
1 VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFR340T
Marking
Pin Configuration
FAs
1=B
2=E
3=C
Package
SC75
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS  113°C
Junction temperature
Ambient temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
Thermal Resistance
Parameter
Symbol
Junction - soldering point2)
RthJS
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
Value
6
15
15
2
10
2
60
150
-65 ... 150
-65 ... 150
Value
 605
Unit
V
mA
mW
°C
Unit
K/W
1 Jul-01-2003


BFR340T 데이터시트, 핀배열, 회로
BFR340T
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 15 V, VBE = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain-
IC = 5 mA, VCE = 3 V
V(BR)CEO 6 9 -
ICES
- - 10
ICBO
- - 100
IEBO
- -1
hFE 60 130 200
Unit
V
µA
nA
µA
-
2 Jul-01-2003




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BFR340T transistor

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