파트넘버.co.kr BFR280TW 데이터시트 PDF


BFR280TW 반도체 회로 부품 판매점

Silicon NPN Planar RF Transistor



Vishay Telefunken 로고
Vishay Telefunken
BFR280TW 데이터시트, 핀배열, 회로
BFR280T/BFR280TW
Vishay Telefunken
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.2 mA to 8 mA.
Features
D Low power applications
D Low noise figure
D High transition frequency
11
94 9280
23
BFR280T Marking: RE
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
13 652
23
BFR280TW Marking: WRE
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
13 570
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Tamb 114 °C
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
15
8
2
10
80
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3
plated with 35mm Cu
Symbol
RthJA
Value
450
Unit
K/W
Document Number 85027
Rev. 2, 20-Jan-99
www.vishay.de FaxBack +1-408-970-5600
1 (4)


BFR280TW 데이터시트, 핀배열, 회로
BFR280T/BFR280TW
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector-emitter cut-off current
VCE = 15 V, VBE = 0
Collector-base cut-off current
VCB = 10 V, IE = 0
Emitter-base cut-off current
VEB = 1 V, IC = 0
Collector-emitter breakdown voltage IC = 1 mA, IB = 0
Collector-emitter saturation voltage IC = 5 mA, IB = 0.5 mA
DC forward current transfer ratio VCE = 1 V, IC = 0.25 mA
VCE = 1 V, IC = 3 mA
Symbol Min Typ Max Unit
ICES
100 mA
ICBO
IEBO
100 nA
1 mA
V(BR)CEO 8
V
VCEsat
0.1 0.4 V
hFE 30 90 150
hFE 30 100
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Transducer gain
Test Conditions
VCE = 1 V, IC = 3 mA, f = 500 MHz
VCE = 5 V, IC = 6 mA, f = 500 MHz
VCB = 1 V, f = 1 MHz
VCE = 1 V, f = 1 MHz
VEB = 0.5 V, f = 1 MHz
VCE = 1 V, IC = 3 mA, ZS = ZSopt,
f = 900 MHz
VCE = 5 V, IC = 3 mA, ZS = ZSopt,
f = 1.75 GHz
WVCE = 1 V, IC = 3 mA, ZS = 50 ,
WZL = ZLopt, f = 900 MHz
VCE = 5 V, IC = 6 mA, ZS = 50 ,
ZL = ZLopt, f = 1.75 GHz
WVCE = 5 V, IC = 6 mA, f = 900 MHz,
Z0 = 50
Symbol Min Typ Max Unit
fT 5.5 GHz
fT 7 GHz
Ccb 0.3 pF
Cce 0.15 pF
Ceb 0.3 pF
F 1.6 dB
F 2.4 dB
Gpe
Gpe
S21e2
13.5
12
13
dB
dB
dB
www.vishay.de FaxBack +1-408-970-5600
2 (4)
Document Number 85027
Rev. 2, 20-Jan-99




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BFR280TW transistor

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