(PDF) BFR193 Datasheet - Low Noise Silicon Bipolar RF Transistor

Número de pieza	BFR193
Descripción	Low Noise Silicon Bipolar RF Transistor
Fabricantes	Infineon Technologies AG
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No Preview Available ! Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFR193 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR193 Marking Pin Configuration RCs 1=B 2=E 3=C Package SOT23 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 69°C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 12 20 20 2 80 10 580 150 -55 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point2) RthJS 140 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2014-04-04 1 page Package SOT23 BFR193 5 2014-04-04 5 Page

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PDF BFR193 Data sheet ( Hoja de datos )