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PDF BFR193 Data sheet ( Hoja de datos )
| Número de pieza | BFR193 | |
| Descripción | NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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NPN Silicon RF Transistor
• For low noise, high-gain amplifiers up to 2GHz
• For linear broadband amplifiers
• fT = 8GHz
F = 1.3dB at 900MHz
BFR 193
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFR 193 RCs
Q62702-F1218
1=B
2=E
3=C
Package
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 69 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
12
20
20
2
80
10
580
150
- 65 ... + 150
- 65 ... + 150
≤ 140
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-11-1996
1 page  
BFR 193
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
600
mW
500
Ptot}
450
TS
400
350
300
TA
250
200
150
100
50
0
0 20 40 60 80 100 120 °C 150
TA,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3
K/W
RthJS
10 2
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 3
-
Ptotmax/PtotDC
10 2
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Semiconductor Group
5
10 0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1s 10 0
tp
Dec-11-1996
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BFR193.PDF ] | |
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