BFR181T 반도체 회로 부품 판매점
NPN Silicon RF Transistor
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 Infineon Technologies AG |
NPN Silicon RF Transistor
Preliminary data
For low noise, high-gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA
fT = 8 GHz
F = 1.45 dB at 900 MHz
BFR181T
3
2
1 VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFR181T
Marking
RFs
Pin Configuration
1=B
2=E
3=C
Package
SC75
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS 79°C 1)
Junction temperature
Ambient temperature
Storage temperature
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
Value
12
20
20
2
20
2
175
150
-65 ... 150
-65 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Junction - soldering point2)
RthJS
405
K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
1 Aug-09-2001
BFR181T
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 5 mA, VCE = 8 V
V(BR)CEO 12
-
-V
ICES
- - 100 µA
ICBO
- - 100 nA
IEBO
- - 1 µA
hFE 50 100 200 -
2 Aug-09-2001
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제조업체: Infineon Technologies AG
( infineon )
BFR181T transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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