|
Siemens Semiconductor Group |
NPN Silicon RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 0.5 mA to 12mA
• fT = 8GHz
F = 1.45dB at 900MHz
BFR 181
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFR 181 RFs
Q62702-F1314
1=B
2=E
3=C
Package
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
TS ≤ 91 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
1) TS is measured on the collector lead at the soldering point to the pcb.
Values
12
20
20
2
20
2
175
150
- 65 ... + 150
- 65 ... + 150
≤ 335
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-11-1996
BFR 181
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 5 mA, VCE = 8 V
V(BR)CEO
12
ICES
-
ICBO
-
IEBO
-
hFE
50
-
-
-
-
100
max.
-
100
100
1
200
Unit
V
µA
nA
µA
-
Semiconductor Group
2
Dec-11-1996
|