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Siemens Semiconductor Group |
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
BUZ 311
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 311
VDS
ID
1000 V 2.5 A
RDS(on)
5Ω
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 kΩ
Continuous drain current
TC = 25 °C
Pulsed drain current
TC = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-218 AA
Ordering Code
C67078-A3102-A2
Symbol
VDS
VDGR
ID
IDpuls
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Values
1000
Unit
V
1000
2.5
A
10
± 20
V
W
78
-55 ... ...+ 150 °C
-55 ... ...+ 150
≤ 1.6
K/W
75
C
55 / 150 / 56
Semiconductor Group
1
07/96
BUZ 311
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Unit
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 1000 V, VGS = 0 V, Tj = 25 °C
VDS = 1000 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 1.5 A
V(BR)DSS
1000
VGS(th)
2.1
IDSS
-
-
IGSS
-
RDS(on)
-
-
3
20
100
10
4.5
V
-
4
250
1000
100
5
µA
nA
Ω
Semiconductor Group
2
07/96
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