BUZ31 반도체 회로 부품 판매점
SIPMOS Power Transistor
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 Infineon Technologies AG |
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
BUZ 31
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 31
VDS
200 V
ID
14.5 A
RDS(on)
0.2 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 30 ˚C
Pulsed drain current
TC = 25 ˚C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 14.5 A, VDD = 50 V, RGS = 25 Ω
L = 1.42 mH, Tj = 25 ˚C
Gate source voltage
Power dissipation
TC = 25 ˚C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Data Sheet
1
Ordering Code
C67078-S.1304-A2
Values
14.5
58
14.5
9
Unit
A
mJ
200
± 20
95
-55 ... + 150
-55 ... + 150
≤ 1.32
75
E
55 / 150 / 56
V
W
˚C
K/W
05.99
BUZ 31
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 200 V, VGS = 0 V, Tj = 25 ˚C
VDS = 200 V, VGS = 0 V, Tj = 125 ˚C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 9 A
Symbol
min.
Values
typ.
max.
V(BR)DSS
200
VGS(th)
2.1
IDSS
-
-
IGSS
-
RDS(on)
-
--
34
0.1 1
10 100
10 100
0.16 0.2
Unit
V
µA
nA
Ω
Data Sheet
2
05.99
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제조업체: Infineon Technologies AG
( infineon )
BUZ31 transistor
데이터시트 다운로드 :
[ BUZ31.PDF ]
[ BUZ31 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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