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Siemens Semiconductor Group |
BUZ 308
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 308
VDS
800 V
ID
2.6 A
RDS(on)
4Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 50 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 3 A, VDD = 50 V, RGS = 25 Ω
L = 66.6 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-218 AA
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S3109-A2
Values
2.6
10
3
8
Unit
A
mJ
320
± 20
75
-55 ... + 150
-55 ... + 150
≤ 1.67
75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
09/96
BUZ 308
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 800 V, VGS = 0 V, Tj = 25 °C
VDS = 800 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 1.5 A
Symbol
min.
V(BR)DSS
800
VGS(th)
2.1
IDSS
-
-
IGSS
-
RDS(on)
-
Values
typ. max.
--
34
0.1 1
10 100
10 100
3.5 4
Unit
V
µA
nA
Ω
Semiconductor Group
2
09/96
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