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Número de pieza | BUZ307 | |
Descripción | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BUZ307 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! BUZ 307
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 307
VDS
800 V
ID
3A
RDS(on)
3Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 35 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 3 A, VDD = 50 V, RGS = 25 Ω
L = 66.6 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-218 AA
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S3100-A2
Values
3
12
3
8
Unit
A
mJ
320
± 20
75
-55 ... + 150
-55 ... + 150
≤ 1.67
75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
09/96
1 page BUZ 307
Power dissipation
Ptot = ƒ(TC)
80
W
Ptot
60
50
40
30
20
10
0
0 20 40 60 80 100 120 °C 160
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
10 2
A
I
D 10 1
I
V
10 0
R
10 -1
tp = 670.0ns
1 µs
10 µs
100 µs
1 ms
10 ms
DC
Drain current
ID = ƒ(TC)
parameter: VGS ≥ 10 V
3.2
A
ID
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0 20 40 60 80 100 120 °C 160
TC
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 1
K/W
Z
thJC 10 0
10 -1
10 -2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -2
10 0
10 1
Semiconductor Group
10 2 V 10 3
VDS
5
10 -3
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
09/96
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet BUZ307.PDF ] |
Número de pieza | Descripción | Fabricantes |
BUZ305 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | Siemens Semiconductor Group |
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BUZ307 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | Siemens Semiconductor Group |
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