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Siemens Semiconductor Group |
BUZ 271
SIPMOS ® Power Transistor
• P channel
• Enhancement mode
• Avalanche rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 271
VDS
-50 V
ID
-22 A
RDS(on)
0.15 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 26 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = -22 A, VDD = -25 V, RGS = 25 Ω
L = 413 µH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1453-A2
Values
-22
Unit
A
-88
mJ
200
± 20
125
-55 ... + 150
-55 ... + 150
≤1
≤ 75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96
BUZ 271
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = -0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = -50 V, VGS = 0 V, Tj = 25 °C
VDS = -50 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
VGS = -20 V, VDS = 0 V
Drain-Source on-resistance
VGS = -10 V, ID = -14 A
Symbol
min.
V(BR)DSS
-50
VGS(th)
-2.1
IDSS
-
-
IGSS
-
RDS(on)
-
Values
typ. max.
Unit
V
--
-3
-0.1
-10
-10
0.12
-4
-1
-100
-100
0.15
µA
nA
Ω
Semiconductor Group
2
07/96
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