BUZ271 반도체 회로 부품 판매점
SIPMOS Power Transistor (P channel Enhancement mode Avalanche rated)
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 Siemens Semiconductor Group |
SIPMOS ® Power Transistor
BUZ 255
Not for new design
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 255
VDS
200 V
ID
13 A
RDS(on)
0.24 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 31 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 13 A, VDD = 50 V, RGS = 25 Ω
L = 1.89 mH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1406-A2
Values
13
52
13
9
Unit
A
mJ
200
± 20
95
-55 ... + 150
-55 ... + 150
≤ 1.32
75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96
BUZ 255
Not for new design
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 250 V, VGS = 0 V, Tj = 25 °C
VDS = 250 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 8.5 A
Symbol
min.
V(BR)DSS
250
VGS(th)
2.1
IDSS
-
-
IGSS
-
RDS(on)
-
Values
typ. max.
Unit
V
--
3
0.1
10
10
0.22
4
1
100
100
0.24
µA
nA
Ω
Semiconductor Group
2
07/96
|
PDF 파일 내의 페이지 : 총 9 페이지
제조업체: Siemens Semiconductor Group
( siemens )
BUZ271 transistor
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[ BUZ271.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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